WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
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WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits

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WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits

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dc.contributor.author Godel, Florian
dc.contributor.author Zatko, V.
dc.contributor.author Carrétéro, C.
dc.contributor.author Sander, Anke
dc.contributor.author Galbiati, Marta
dc.contributor.author Vecchiola, Aymeric
dc.contributor.author Brus, P.
dc.contributor.author Bezencenet, O.
dc.contributor.author Servet, B.
dc.contributor.author Martin, M.-B.
dc.contributor.author Dlubak, Bruno
dc.contributor.author Seneor, Pierre
dc.date.accessioned 2021-04-28T16:31:59Z
dc.date.available 2021-04-28T16:31:59Z
dc.date.issued 2020
dc.identifier.uri https://hdl.handle.net/10550/78966
dc.description.abstract We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D-semiconductor integration protocol preserves the interface integrity. Illustratively, the WS2/Ni electrode is shown to be resistant to oxidation (even after extended exposure to ambient conditions) and to present tunneling characteristics once integrated into a complete vertical device. Overall, these experiments show that the presented PLD approach used here for WS2 growth is versatile and has a strong potential to accelerate the integration and evaluation of large-scale 2D-semiconductor platforms in electronics and spintronics circuits.
dc.language.iso eng
dc.relation.ispartof ACS Applied Nano Materials, 2020, vol. 3, num. 8, p. 7908-7916
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Godel, Florian Zatko, V. Carrétéro, C. Sander, Anke Galbiati, Marta Vecchiola, Aymeric Brus, P. Bezencenet, O. Servet, B. Martin, M.-B. Dlubak, Bruno Seneor, Pierre 2020 WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits ACS Applied Nano Materials 3 8 7908 7916
dc.subject Nanotecnologia
dc.subject Semiconductors
dc.subject Espectroscòpia Raman
dc.title WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
dc.type info:eu-repo/semantics/article
dc.date.updated 2021-04-28T16:32:00Z
dc.identifier.doi https://doi.org/10.1021/acsanm.0c01408
dc.identifier.idgrec 146198

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