Topology driven g-factor tuning in type-II quantum dots
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Topology driven g-factor tuning in type-II quantum dots

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Topology driven g-factor tuning in type-II quantum dots

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dc.contributor.author Llorens, J. M.
dc.contributor.author Lopes-Oliveira, V.
dc.contributor.author López-Richard, V.
dc.contributor.author Cardozo de Oliveira, E. R.
dc.contributor.author Wewiór, L.
dc.contributor.author Ulloa, J. M.
dc.contributor.author Teodoro, M. D.
dc.contributor.author Marques, G. E.
dc.contributor.author García Cristóbal, Alberto
dc.contributor.author Hai, G.-Q.
dc.contributor.author Alén, B.
dc.date.accessioned 2020-06-15T09:14:57Z
dc.date.available 2020-06-15T09:14:57Z
dc.date.issued 2019
dc.identifier.uri https://hdl.handle.net/10550/74998
dc.description.abstract We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II In As/Ga Asx Sb1−x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic →k⋅ →p and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the In As/Ga As realm.
dc.language.iso eng
dc.relation.ispartof Physical Review D, 2019, vol. 11, p. 044011-1-044011-15
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Llorens, J. M. Lopes-Oliveira, V. López-Richard, V. Cardozo de Oliveira, E. R. Wewiór, L. Ulloa, J. M. Teodoro, M. D. Marques, G. E. García Cristóbal, Alberto Hai, G.-Q. Alén, B. 2019 Topology driven g-factor tuning in type-II quantum dots Physical Review D 11 044011-1 044011-15
dc.subject Semiconductors
dc.subject Ciència dels materials
dc.title Topology driven g-factor tuning in type-II quantum dots
dc.type info:eu-repo/semantics/article
dc.date.updated 2020-06-15T09:15:32Z
dc.identifier.doi https://doi.org/10.1103/PhysRevApplied.11.044011
dc.identifier.idgrec 139584

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