Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform
NAGIOS: RODERIC FUNCIONANDO

Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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dc.contributor.author Kern, Lisa-Marie
dc.contributor.author Galceran, Regina
dc.contributor.author Zatko, V.
dc.contributor.author Galbiati, Marta
dc.contributor.author Godel, Florian
dc.contributor.author Perconte, D.
dc.contributor.author Bouamrane, F.
dc.contributor.author Gaufrès, E.
dc.contributor.author Loiseau, A.
dc.contributor.author Brus, P.
dc.contributor.author Bezencenet, O.
dc.contributor.author Martin, M.-B.
dc.contributor.author Servet, B.
dc.contributor.author Petroff, F.
dc.contributor.author Dlubak, Bruno
dc.contributor.author Seneor, Pierre
dc.date.accessioned 2020-06-05T09:23:52Z
dc.date.available 2020-06-05T09:23:52Z
dc.date.issued 2019
dc.identifier.uri https://hdl.handle.net/10550/74902
dc.description.abstract We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices.
dc.language.iso eng
dc.relation.ispartof Applied Physics Letters, 2019, vol. 114, num. 053107
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Kern, Lisa-Marie Galceran, Regina Zatko, V. Galbiati, Marta Godel, Florian Perconte, D. Bouamrane, F. Gaufrès, E. Loiseau, A. Brus, P. Bezencenet, O. Martin, M.-B. Servet, B. Petroff, F. Dlubak, Bruno Seneor, Pierre 2019 Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform Applied Physics Letters 114 053107
dc.subject Materials
dc.subject Espectroscòpia Raman
dc.title Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform
dc.type info:eu-repo/semantics/article
dc.date.updated 2020-06-05T09:23:53Z
dc.identifier.doi https://doi.org/10.1063/1.5086840
dc.identifier.idgrec 139352

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