Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform
NAGIOS: RODERIC FUNCIONANDO

Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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Kern, Lisa-Marie; Galceran, Regina; Zatko, V.; Galbiati, Marta; Godel, Florian; Perconte, D.; Bouamrane, F.; Gaufrès, E.; Loiseau, A.; Brus, P.; Bezencenet, O.; Martin, M.-B.; Servet, B.; Petroff, F.; Dlubak, Bruno; Seneor, Pierre
This document is a artículoDate2019
We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices.

    Kern, Lisa-Marie Galceran, Regina Zatko, V. Galbiati, Marta Godel, Florian Perconte, D. Bouamrane, F. Gaufrès, E. Loiseau, A. Brus, P. Bezencenet, O. Martin, M.-B. Servet, B. Petroff, F. Dlubak, Bruno Seneor, Pierre 2019 Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform Applied Physics Letters 114 053107
https://doi.org/10.1063/1.5086840

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