WS2/MoS2 Heterostructures through Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters
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WS2/MoS2 Heterostructures through Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters

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WS2/MoS2 Heterostructures through Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters

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dc.contributor.author Morant Giner, Marc
dc.contributor.author Brotons-Alcazar, Isaac
dc.contributor.author Shmelev, Nikita Y.
dc.contributor.author Gushchin, Artem L.
dc.contributor.author Norman, Luke
dc.contributor.author Khlobystov, Andrei N.
dc.contributor.author Alberola Catalán, Antonio
dc.contributor.author Tatay Aguilar, Sergio
dc.contributor.author Canet Ferrer, José
dc.contributor.author Forment Aliaga, Alicia
dc.contributor.author Coronado Miralles, Eugenio
dc.date.accessioned 2020-04-24T09:24:17Z
dc.date.available 2020-04-24T09:24:17Z
dc.date.issued 2020
dc.identifier.uri https://hdl.handle.net/10550/74031
dc.description.abstract The preparation of 2D stacked layers that combine flakes of different nature, gives rise to countless number of heterostructures where new band alignments, defined at the interfaces, control the electronic properties of the system. Among the large family of 2D/2D heterostructures, the one formed by the combination of the most common semiconducting transition metal dichalcogenides WS2/MoS2, has awaken great interest due to its photovoltaic and photoelectrochemical properties. Solution as well as dry physical methods have been developed to optimize the synthesis of these heterostructures. Here a suspension of negatively charged MoS2 flakes is mixed with a methanolic solution of a cationic W3S4-core cluster, giving rise to a homogeneous distribution of the clusters over the layers. In a second step, a calcination under N2 of this molecular/2D heterostructure leads to the formation of clean WS2/MoS2 heterostructures where the photoluminescence of both counterparts is quenched, proving an efficient interlayer coupling. Thus, this chemical method combines the advantages of a solution approach (simple, scalable and low-cost) with the good quality interfaces reached by using more complicated traditional physical methods.
dc.language.iso eng
dc.relation.ispartof Chemistry-A European Journal, 2020, vol. 2020, num. 26, p. 6670-6678
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Morant Giner, Marc Brotons-Alcazar, Isaac Shmelev, Nikita Y. Gushchin, Artem L. Norman, Luke Khlobystov, Andrei N. Alberola Catalán, Antonio Tatay Aguilar, Sergio Canet Ferrer, José Forment Aliaga, Alicia Coronado Miralles, Eugenio 2020 WS2/MoS2 Heterostructures through Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters Chemistry-A European Journal 2020 26
dc.subject Semiconductors
dc.subject Metalls de transició
dc.subject Materials
dc.title WS2/MoS2 Heterostructures through Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters
dc.type info:eu-repo/semantics/article
dc.date.updated 2020-04-24T09:24:17Z
dc.identifier.doi https://doi.org/10.1002/chem.202000248
dc.identifier.idgrec 137562

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