Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides
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Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides

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Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides

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dc.contributor.author Galbiati, Marta
dc.contributor.author Tatay Aguilar, Sergio
dc.contributor.author Dubois, Simon M.-M.
dc.contributor.author Godel, Florian
dc.contributor.author Galceran, Regina
dc.contributor.author Mañas Valero, Samuel
dc.contributor.author Piquemal-Banci, M.
dc.contributor.author Vecchiola, Aymeric
dc.contributor.author Charlier, Jean-Christophe
dc.contributor.author Forment Aliaga, Alicia
dc.contributor.author Coronado Miralles, Eugenio
dc.contributor.author Dlubak, Bruno
dc.contributor.author Seneor, Pierre
dc.date.accessioned 2020-04-21T11:38:07Z
dc.date.available 2020-04-21T11:38:07Z
dc.date.issued 2019
dc.identifier.uri https://hdl.handle.net/10550/73962
dc.description.abstract Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magnetoresistance (MR) signals are very difficult to obtain and, when they finally are, they are often far from expectations. We propose a fabrication method to circumvent this key issue for 2D-based spintronics devices. We report on the fabrication of NiFe/MoS2/Co spin valves with mechanically exfoliated multilayer MoS2 using an in situ fabrication protocol that allows high-quality nonoxidized interfaces to be maintained between the ferromagnetic electrodes and the 2D layer. Devices display a large MR of 5%. Beyond interfaces and material quality, we suggest that an overlooked more fundamental physics issue related to spin-current depolarization could explain the limited MR observed so far in MoS2-based magnetic tunnel junctions. This points to a path towards the observation of larger spin signals in line with theoretical predictions above 100%. We envision the impact of our work to be beyond MoS2 and its broader transition-metal dichalcogenides family by opening the way to an accelerated screening of other 2D materials that are yet to be explored for spintronics.
dc.language.iso eng
dc.relation.ispartof Physical Review Applied, 2019, vol. 12, num. 4, p. 044022-1-044022-7
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Galbiati, Marta Tatay Aguilar, Sergio Dubois, Simon M.-M. Godel, Florian Galceran, Regina Mañas Valero, Samuel Piquemal-Banci, M. Vecchiola, Aymeric Charlier, Jean-Christophe Forment Aliaga, Alicia Coronado Miralles, Eugenio Dlubak, Bruno Seneor, Pierre 2019 Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides Physical Review Applied 12 4 044022-1 044022-7
dc.subject Metalls de transició
dc.subject Nanotecnologia
dc.subject Física
dc.title Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides
dc.type info:eu-repo/semantics/article
dc.date.updated 2020-04-21T11:38:07Z
dc.identifier.doi https://doi.org/10.1103/PhysRevApplied.12.044022
dc.identifier.idgrec 134891

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