Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
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Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

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Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

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dc.contributor.author Angelova Ivanova, Todora Ivanova
dc.contributor.author Cros Stotter, Ana
dc.contributor.author Cantarero Sáez, Andrés
dc.contributor.author Fuster, David
dc.contributor.author González, Yolanda
dc.contributor.author González, L.
dc.date.accessioned 2010-05-24T08:19:37Z
dc.date.available 2010-05-24T08:19:37Z
dc.date.issued 2008
dc.identifier.uri http://hdl.handle.net/10550/4368
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000104000003033523000001&idtype=cvips&prog=normal&doi=10.1063/1.2963703 en
dc.source ANGELOVA, T. ; CROS, A. ; CANTARERO, A. ; FUSTER, D. ; GONZÁLEZ, Y. ; GONZÁLEZ, L. Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness. En: Journal of Applied Physics, 2008, vol. 104 en
dc.subject Annealing ; Critical points ; III-V semiconductors ; Indium compounds ; Phonons ; Raman spectra ; Self-assembly ; Semiconductor quantum wires en
dc.title Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.2963703 en
dc.description.abstractenglish Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model. en
dc.description.private Todora.Angelova@uv.es Ana.Cros@uv.es Andres.Cantarero@uv.es en

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