Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
NAGIOS: RODERIC FUNCIONANDO

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

DSpace Repository

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

Show simple item record

dc.contributor.author Martínez Pastor, Juan Pascual
dc.contributor.author Fuster, David
dc.contributor.author Abellán, M.
dc.contributor.author Anguita, J.
dc.contributor.author Sochinskii, N. V.
dc.date.accessioned 2010-05-03T12:04:17Z
dc.date.available 2010-05-03T12:04:17Z
dc.date.issued 2008
dc.identifier.uri http://hdl.handle.net/10550/2333
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000103000005056108000001&idtype=cvips&prog=normal&doi=10.1063/1.2874480 en
dc.source MARTÍNEZ-PASTOR, J. ; FUSTER, D. ; ABELLÁN, M. ; ANGUITA, J. ; SOCHINSKII, N.V. Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers. En: Journal of Applied Physics, 2008, vol. 103 en
dc.subject Cadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growth en
dc.title Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.2874480 en
dc.description.abstractenglish We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs. en
dc.description.private Juan.Mtnez.Pastor@uv.es en

View       (296.9Kb)

This item appears in the following Collection(s)

Show simple item record

Search DSpace

Advanced Search

Browse

Statistics