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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

dc.contributor.author	Lang, O.
dc.contributor.author	Pettenkofer, C.
dc.contributor.author	Sánchez Royo, Juan Francisco
dc.contributor.author	Segura García del Río, Alfredo
dc.contributor.author	Klein, A.
dc.contributor.author	Jaegermann, W.
dc.date.accessioned	2010-06-21T10:29:57Z
dc.date.available	2010-06-21T10:29:57Z
dc.date.issued	1999
dc.identifier.uri	http://hdl.handle.net/10550/13032
dc.language.iso	en	en
dc.relation	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000086000010005687000001&idtype=cvips&prog=normal&doi=10.1063/1.371579	en
dc.source	LANG, O. ; PETTENKIFER, C. ; SÁNCHEZ ROYO, J.F. ; SEGURA, A. ; KLEIN, A. ; JAEGERMANN, W. Thin film growth and band lineup of In2O3 on the layered semiconductor InSe. En: Journal of Applied Physics, 1999, vol. 86, no. 10	en
dc.subject	Indium compounds ; Vacuum deposition ; X-ray diffraction ; Photoelectron spectra ; Semiconductor-insulator boundaries ; Work function ; Fermi level ; Ionisation potential ; Electron affinity ; Interface states ; Band structure	en
dc.title	Thin film growth and band lineup of In2O3 on the layered semiconductor InSe	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.371579	en
dc.description.abstractenglish	Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignment with ΔEV = 2.05 eV, ΔEC = 0.29 eV, and an interface dipole of δ = −0.55 eV.	en
dc.description.private	Juan.F.Sanchez@uv.es	en
dc.type.hasVersion	VoR	es_ES