Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

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dc.contributor.author Lang, O.
dc.contributor.author Pettenkofer, C.
dc.contributor.author Sánchez Royo, Juan Francisco
dc.contributor.author Segura García del Río, Alfredo
dc.contributor.author Klein, A.
dc.contributor.author Jaegermann, W.
dc.date.accessioned 2010-06-21T10:29:57Z
dc.date.available 2010-06-21T10:29:57Z
dc.date.issued 1999
dc.identifier.uri http://hdl.handle.net/10550/13032
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000086000010005687000001&idtype=cvips&prog=normal&doi=10.1063/1.371579 en
dc.source LANG, O. ; PETTENKIFER, C. ; SÁNCHEZ ROYO, J.F. ; SEGURA, A. ; KLEIN, A. ; JAEGERMANN, W. Thin film growth and band lineup of In2O3 on the layered semiconductor InSe. En: Journal of Applied Physics, 1999, vol. 86, no. 10 en
dc.subject Indium compounds ; Vacuum deposition ; X-ray diffraction ; Photoelectron spectra ; Semiconductor-insulator boundaries ; Work function ; Fermi level ; Ionisation potential ; Electron affinity ; Interface states ; Band structure en
dc.title Thin film growth and band lineup of In2O3 on the layered semiconductor InSe en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.371579 en
dc.description.abstractenglish Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignment with ΔEV = 2.05 eV, ΔEC = 0.29 eV, and an interface dipole of δ = −0.55 eV. en
dc.description.private Juan.F.Sanchez@uv.es en

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