Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
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Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

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Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

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dc.contributor.author Popovic, Zoran V.
dc.contributor.author Cantarero Sáez, Andrés
dc.contributor.author Camacho, J.
dc.contributor.author Milutinovi, A.
dc.contributor.author Latinovi, O.
dc.contributor.author González, L.
dc.date.accessioned 2010-06-21T10:28:40Z
dc.date.available 2010-06-21T10:28:40Z
dc.date.issued 2000
dc.identifier.uri http://hdl.handle.net/10550/13030
dc.language.iso es en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000088000011006382000001&idtype=cvips&prog=normal&doi=10.1063/1.1287133 en
dc.source POPOVIC, Z.V. ; CANTARERO, A. ; CAMACHO, J. ; MILUTINOVI, A. ; LATINOVI, O. ; GONZÁLEZ, L. Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices. En: Journal of Applied Physics, 2000, vol. 88, no. 11 en
dc.subject Indium compounds ; Gallium arsenide ; III-V semiconductors ; Semiconductor superlattices ; Raman spectra ; Infrared spectra ; Reflectivity ; Interface phonons ; Semiconductor epitaxial layers en
dc.title Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.1287133 en
dc.description.abstractenglish We have measured far-infrared and infrared reflectivity as well as Raman scattering in an [(InP)5(In0.49Ga0.51As)8]30 superlattice grown by molecular beam epitaxy. A numerical model for calculating the reflectivity coefficient for complex systems which includes superlattice, buffer layer, and substrate has been developed. The far-infrared reflectivity spectra consists of the superlattice confined and interface modes as well as the modes from the buffer layer (In0.49Ga0.51As) and the substrate (InP). In the infrared spectral range above 1000 cm−1 we observe only interference fringes from the buffer layer. A good agreement between calculated and experimental spectra is achieved. The folded longitudinal acoustic phonon doublet appears at about 39 cm−1 in the Raman scattering spectra. The frequency agrees well with a continuum model calculation. In the optical phonon spectral region we observe confined modes corresponding to both constituents. The modes representing vibrations of atoms at both interfaces: InP/InGaAs (230 cm−1 mode) and InGaAs/InP (240 and 260 cm−1 modes) have also been observed. The geometrical parameters of the sample, obtained from the fitting of the reflectivity data, agree well to the values of the layer thickness obtained by double crystal x-ray diffraction. en
dc.description.private Zoran.Popovic@uv.es ; cantarer@uv.es en

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