Photoluminescence study of excitons in homoepitaxial GaN
NAGIOS: RODERIC FUNCIONANDO

Photoluminescence study of excitons in homoepitaxial GaN

DSpace Repository

Photoluminescence study of excitons in homoepitaxial GaN

Show simple item record

dc.contributor.author Martínez Criado, Gema
dc.contributor.author Miskys, C. R.
dc.contributor.author Cros Stotter, Ana
dc.contributor.author Ambacher, O.
dc.contributor.author Cantarero Sáez, Andrés
dc.contributor.author Stutzmann, M.
dc.date.accessioned 2010-06-21T10:09:57Z
dc.date.available 2010-06-21T10:09:57Z
dc.date.issued 2001
dc.identifier.uri http://hdl.handle.net/10550/13015
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000011005627000001&idtype=cvips&prog=normal&doi=10.1063/1.1413713 en
dc.source MARTÍNEZ CRIADO, G. ; MISKYS, C.R. ; CROS STOTTER, A. ; AMBACHER, O. ; CANTARERO, A. ; STTZMANN, M. Photoluminescence study of excitons in homoepitaxial GaN. En: Journal of Applied Phisics, 2001, vol. 90, no. 11 en
dc.subject Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor epitaxial layers ; Photoluminescence ; Excitons ; Effective mass en
dc.title Photoluminescence study of excitons in homoepitaxial GaN en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.1413713 en
dc.description.abstractenglish High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free- and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, EG(4.3 K) = 3.506 eV, can be given. From the donor bound excitons and their “two-electron” satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the electron and hole masses have been obtained within the effective mass approximation. en
dc.description.private Gema.Martinez@uv.es ; Andres.Cantarero@uv.es en

View       (69.26Kb)

This item appears in the following Collection(s)

Show simple item record

Search DSpace

Advanced Search

Browse

Statistics