High accuracy Raman measurements using the Stokes and anti-Stokes lines
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High accuracy Raman measurements using the Stokes and anti-Stokes lines

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High accuracy Raman measurements using the Stokes and anti-Stokes lines

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dc.contributor.author Trzeciakowski, Witold
dc.contributor.author Martínez Pastor, Juan Pascual
dc.contributor.author Cantarero Sáez, Andrés
dc.date.accessioned 2010-06-08T09:57:31Z
dc.date.available 2010-06-08T09:57:31Z
dc.date.issued 1997
dc.identifier.uri http://hdl.handle.net/10550/12872
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000082000008003976000001&idtype=cvips&prog=normal&doi=10.1063/1.366537 en
dc.source TRZECIAKOWSKI, Witold ; MARTÍNEZ PASTOR, Juan ; CANTARERO, Andrés. High accuracy Raman measurements using the Stokes and anti-Stokes lines. En: Journal of Applied Physics, 1997, vol. 82, no. 8 en
dc.subject Silicon ; Germanium ; Elemental Semiconductors ; Gallium Arsenide ; Indium Compounds ; Gallium Compounds ; III-V Semiconductors ; Raman Spectra ; Phonon Spectra ; Semiconductor Epitaxial Layers ; Integrated Circuit Technology ; Deformation ; Laser Beam Effects ; Thermo-Optical Effects en
dc.title High accuracy Raman measurements using the Stokes and anti-Stokes lines en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.366537 en
dc.description.abstractenglish We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applied biaxial strain, laser power, and temperature. en
dc.description.private Andres.Cantarero@uv.es ; Juan.Mtnez.Pastor@uv.es en

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