Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
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Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells

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Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells

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dc.contributor.author Martínez Pastor, Juan Pascual
dc.contributor.author González, L.
dc.contributor.author Aragón, G.
dc.contributor.author Guenaud, Ch.
dc.contributor.author Deleporte, E.
dc.date.accessioned 2010-06-03T07:47:14Z
dc.date.available 2010-06-03T07:47:14Z
dc.date.issued 1998
dc.identifier.uri http://hdl.handle.net/10550/12858
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000084000012006832000001&idtype=cvips&prog=normal&doi=10.1063/1.369015 en
dc.source MARTÍNEZ PASTOR, J. ; GONZÁLEZ, L. ; ARAGÓN, G. ; GUENAUD, Ch. ; DELEPORTE, E. Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells. En: Journal of Applied Physics, 1998, vol. 84, no. 12 en
dc.subject Indium compounds ; Gallium compounds ; III-V semiconductors ; Gallium arsenide ; Semiconductor quantum wells ; Interface structure ; Photoluminescence ; Excitons ; Interface states ; Fluctuations ; Stoichiometry ; Spectral line broadening ; Energy gap ; Optical constants en
dc.title Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.369015 en
dc.description.abstractenglish In this work high structural and optical quality InxGa1−xP/GaAs quantum wells in a wide range of thicknesses have been successfully grown on GaAs substrates by low temperature atomic layer molecular beam epitaxy. We demonstrate that compositional fluctuations in the barrier alloy are responsible for the inhomogeneous broadening and spatial localization effects observed in the excitonic recombination, the influence of quantum well width fluctuations being negligible in comparison. An important change of the optical transition energies in these quantum wells is observed when tuning a 10% In–Ga ratio in the alloy around the lattice match composition (x=0.48). This change is related to the barrier band gap variation and the intrinsic characteristics of the InGaP/GaAs heterostructure: different exciton binding energy from tensile to compressive strain in the barrier, and a possible dependence of the conduction band offset on the In composition. en
dc.description.private Juan.Mtnez.Pastor@uv.es en

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