Modulation of the electronic properties of GaN films by surface acoustic waves
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Modulation of the electronic properties of GaN films by surface acoustic waves

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Modulation of the electronic properties of GaN films by surface acoustic waves

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dc.contributor.author Camacho, J.
dc.contributor.author Santos, P.V.
dc.contributor.author Alsina, F.
dc.contributor.author Ramsteiner, M.
dc.contributor.author Ploog, K. H.
dc.contributor.author Cantarero Sáez, Andrés
dc.contributor.author Obloh, H.
dc.contributor.author Wagner, J.
dc.date.accessioned 2010-06-02T10:49:37Z
dc.date.available 2010-06-02T10:49:37Z
dc.date.issued 2003
dc.identifier.uri http://hdl.handle.net/10550/12840
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000094000003001892000001&idtype=cvips&prog=normal&doi=10.1063/1.1582556 en
dc.source CAMACHO, J. ; SANTOS, P.V. ; ALSINA, F. ; RAMSTEINER, M. ; PLOOG, K.H. Modulation of the electronic properties of GaN films by surface acoustic waves. En: Journal of Applied Physics, 2003, vol. 94 en
dc.subject Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Surface acoustic waves ; Semiconductor thin films ; Photoluminescence ; Radiation quenching ; Piezoelectric semiconductors ; Excitons ; Energy gap en
dc.title Modulation of the electronic properties of GaN films by surface acoustic waves en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.1582556 en
dc.description.abstractenglish We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by the SAW strain field. en
dc.description.private cantarer@uv.es en
dc.identifier.idgrec 002106 en

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