Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.
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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

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dc.contributor.author Zúñiga Pérez, Jesús
dc.contributor.author Muñoz Sanjosé, Vicente
dc.contributor.author Lorenz, M.
dc.contributor.author Benndorf, G.
dc.contributor.author Heitsch, S.
dc.contributor.author Spemann, D.
dc.contributor.author Grundmann, M.
dc.date.accessioned 2010-05-26T11:38:43Z
dc.date.available 2010-05-26T11:38:43Z
dc.date.issued 2006
dc.identifier.uri http://hdl.handle.net/10550/11216
dc.language.iso en en
dc.source ZÚÑIGA-PÉREZ, J. ; MUÑOZ-SANJOSÉ, V. ; LORENZ, M. ; BENNDORF, G. ; HEITSCH, S. ; SPEMANN, D. ; GRUNDMANN, M. Structural characterization of a-plane Zn1−xCdxO (0 < x < 0.085) thin films grown by metal-organic vapor phase epitaxy. En: Journal of Applied Physics, 2006, vol. 99 en
dc.subject Zinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers en
dc.title Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy. en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.2163014 en
dc.description.abstractenglish Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a new reference frame in which the lattice distortions are directly related to the a-plane surface structure. Cd introduction does not affect the c lattice parameter but expands the lattice along the two perpendicular directions, [11math0] and [math100], resulting in a quadratic volume increase. en
dc.description.private Jesus.Zuniga@uv.es Vicente.Munoz@uv.es en

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