dc.contributor.author |
Zúñiga Pérez, Jesús |
|
dc.contributor.author |
Muñoz Sanjosé, Vicente |
|
dc.contributor.author |
Lorenz, M. |
|
dc.contributor.author |
Benndorf, G. |
|
dc.contributor.author |
Heitsch, S. |
|
dc.contributor.author |
Spemann, D. |
|
dc.contributor.author |
Grundmann, M. |
|
dc.date.accessioned |
2010-05-26T11:38:43Z |
|
dc.date.available |
2010-05-26T11:38:43Z |
|
dc.date.issued |
2006 |
|
dc.identifier.uri |
http://hdl.handle.net/10550/11216 |
|
dc.language.iso |
en |
en |
dc.source |
ZÚÑIGA-PÉREZ, J. ; MUÑOZ-SANJOSÉ, V. ; LORENZ, M. ; BENNDORF, G. ; HEITSCH, S. ; SPEMANN, D. ; GRUNDMANN, M. Structural characterization of a-plane Zn1−xCdxO (0 < x < 0.085) thin films grown by metal-organic vapor phase epitaxy. En: Journal of Applied Physics, 2006, vol. 99 |
en |
dc.subject |
Zinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers |
en |
dc.title |
Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy. |
en |
dc.type |
info:eu-repo/semantics/article |
en |
dc.type |
info:eu-repo/semantics/publishedVersion |
en |
dc.subject.unesco |
UNESCO::FÍSICA |
en |
dc.identifier.doi |
10.1063/1.2163014 |
en |
dc.description.abstractenglish |
Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a new reference frame in which the lattice distortions are directly related to the a-plane surface structure. Cd introduction does not affect the c lattice parameter but expands the lattice along the two perpendicular directions, [11math0] and [math100], resulting in a quadratic volume increase. |
en |
dc.description.private |
Jesus.Zuniga@uv.es Vicente.Munoz@uv.es |
en |