Monolayer black phosphorus by sequential wet-chemical surface oxidation
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Monolayer black phosphorus by sequential wet-chemical surface oxidation

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Monolayer black phosphorus by sequential wet-chemical surface oxidation

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Wild, Stefan; Lloret, Vicent; Vega-Mayoral, Victor; Vella, Daniele; Nuin, Edurne; Siebert, Martin; Koleśnik-Gray, Maria; Löffler, Mario; Mayrhofer, Karl J. J.; Gadermaier, Christoph; Krstić, Vojislav; Hauke, Frank; Abellán Sáez, Gonzalo; Hirsch, Andreas
This document is a artículoDate2019
We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.

    Wild, Stefan Lloret, Vicent Vega-Mayoral, Victor Vella, Daniele Nuin, Edurne Siebert, Martin Kole&#347nik-Gray, Maria Löffler, Mario Mayrhofer, Karl J. J. Gadermaier, Christoph Krsti&#263, Vojislav Hauke, Frank Abellán Sáez, Gonzalo Hirsch, Andreas 2019 Monolayer black phosphorus by sequential wet-chemical surface oxidation Rsc Advances 9 3570 3576
https://doi.org/10.1039/C8RA09069F

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