Mapping electron beam injected trapped charge with scattering scanning near-field optical microscopy
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Mapping electron beam injected trapped charge with scattering scanning near-field optical microscopy

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Mapping electron beam injected trapped charge with scattering scanning near-field optical microscopy

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Tranca, Denis E.; Sánchez Ortiga, Emilio; Saavedra Tortosa, Genaro; Martínez Corral, Manuel Perfil; Tofail, Syed A.M.; Stanciu, Stefan G.; Hristu, Radu; Stanciu, George A.
Aquest document és un/a article, creat/da en: 2016
Scattering scanning near-field optical microscopy (s-SNOM) has been demonstrated as a valuable tool for mapping the optical and optoelectronic properties of materials with nanoscale resolution. Here we report experimental evidence that trapped electric charges injected by an electron beam at the surface of dielectric samples affect the sample-dipole interaction, which has direct impact on the s-SNOM image content. Nanoscale mapping of the surface trapped charge holds significant potential for the precise tailoring of the electrostatic properties of dielectric and semiconductive samples, such as hydroxyapatite, which has particular importance with respect to biomedical applications. The methodology developed here is highly relevant to semiconductor device fabrication as well.

    Tranca, Denis E. Sánchez Ortiga, Emilio Saavedra Tortosa, Genaro Martínez Corral, Manuel Tofail, Syed A.M. Stanciu, Stefan G. Hristu, Radu Stanciu, George A. 2016 Mapping electron beam injected trapped charge with scattering scanning near-field optical microscopy Optics Letters 41 5 1046 1049
https://doi.org/10.1364/OL.41.001046
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