Surface properties of AlInGaN/GaN heterostructure
NAGIOS: RODERIC FUNCIONANDO

Surface properties of AlInGaN/GaN heterostructure

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Surface properties of AlInGaN/GaN heterostructure

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Minj, Albert; Skuridina, D.; Cavalcoli, D.; Cros Stotter, Ana; Vogt, P.; Kneissl, M.
This document is a artículoDate2016

Este documento está disponible también en : http://hdl.handle.net/10550/57966
Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10-11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.

    Minj, Albert Skuridina, D. Cavalcoli, D. Cros Stotter, Ana Vogt, P. Kneissl, M. 2016 Surface properties of AlInGaN/GaN heterostructure Materials Science in Semiconductor Processing 55 26 31
http://dx.doi.org/10.1016/j.mssp.2016.04.005

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