Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy
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Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

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Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

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dc.contributor.author Minj, Albert
dc.contributor.author Cros Stotter, Ana
dc.contributor.author Auzelle, Thomas
dc.contributor.author Pernot, Julien
dc.contributor.author Daudin, Bruno
dc.date.accessioned 2017-03-23T15:42:59Z
dc.date.available 2017-03-23T15:42:59Z
dc.date.issued 2016
dc.identifier.uri http://hdl.handle.net/10550/57848
dc.description.abstract Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analysing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.
dc.language.iso eng
dc.relation.ispartof Nanotechnology, 2016, vol. 27, num. 38, p. 385202
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Minj, Albert Cros Stotter, Ana Auzelle, Thomas Pernot, Julien Daudin, Bruno 2016 Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy Nanotechnology 27 38 385202
dc.subject Nanotecnologia
dc.subject Ciència dels materials
dc.title Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy
dc.type info:eu-repo/semantics/article
dc.date.updated 2017-03-23T15:42:59Z
dc.identifier.doi https://doi.org/10.1088/0957-4484/27/38/385202
dc.identifier.idgrec 116583

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