Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field
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Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

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Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

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Budagosky Marcilla, Jorge Alejandro; Garro Martínez, Núria; Cros Stotter, Ana; García Cristóbal, Alberto; Founta, S.; Daudin, Bruno
Aquest document és un/a article, creat/da en: 2016
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features.

    Budagosky Marcilla, Jorge Alejandro Garro Martínez, Núria Cros Stotter, Ana García Cristóbal, Alberto Founta, S. Daudin, Bruno 2016 Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field Materials Science in Semiconductor Processing 49 76 80
http://dx.doi.org/10.1016/j.mssp.2016.03.022
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