Phonon-plasmon coupling in Si doped GaN nanowires
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Phonon-plasmon coupling in Si doped GaN nanowires

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Phonon-plasmon coupling in Si doped GaN nanowires

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Rozas-Jiménez, E.; Cros Stotter, Ana; Murcia Mascarós, Sonia; Fang, Zhihua; Daudin, Bruno
Aquest document és un/a article, creat/da en: 2016
The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon-plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A1(LO) mode for all samples. This behavior points to phonon-plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.

    Rozas-Jiménez, E. Cros Stotter, Ana Murcia Mascarós, Sonia Fang, Zhihua Daudin, Bruno 2016 Phonon-plasmon coupling in Si doped GaN nanowires Materials Science in Semiconductor Processing 55 63 66
http://dx.doi.org/10.1016/j.mssp.2016.02.017
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