Acoustic manipulation of electron-hole pairs in GaAs at room temperature
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Acoustic manipulation of electron-hole pairs in GaAs at room temperature

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Acoustic manipulation of electron-hole pairs in GaAs at room temperature

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dc.contributor.author Morais de Lima, Mauricio, Jr.
dc.contributor.author Hey, R.
dc.contributor.author Stotz, J.A.H.
dc.contributor.author Santos, P.V.
dc.date.accessioned 2013-11-27T13:05:36Z
dc.date.available 2013-11-27T13:05:36Z
dc.date.issued 2004
dc.identifier.uri http://dx.doi.org/10.1063/1.1695636
dc.identifier.uri http://hdl.handle.net/10550/31449
dc.description.abstract We demonstrate the optically detected long-range (>100 µm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves (SAWs) in (In,Ga)As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAWbeams, which can be used as a basic control gate for information processing based on ambipolar transport.
dc.relation.ispartof Applied Physics Letters, 2004, vol. 84, num. 14, p. 2569
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Morais de Lima, Mauricio, Jr. Hey, R. Stotz, J.A.H. Santos, P.V. 2004 Acoustic manipulation of electron-hole pairs in GaAs at room temperature Applied Physics Letters 84 14 2569
dc.subject Enginyeria acústica
dc.subject Ciència dels materials
dc.title Acoustic manipulation of electron-hole pairs in GaAs at room temperature
dc.type info:eu-repo/semantics/article
dc.date.updated 2013-11-27T13:05:36Z
dc.identifier.doi http://dx.doi.org/10.1063/1.1695636
dc.identifier.idgrec 037341

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