Polarized recombination of acoustically transported carriers in GaAs nanowires
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Polarized recombination of acoustically transported carriers in GaAs nanowires

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Polarized recombination of acoustically transported carriers in GaAs nanowires

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Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; Morais de Lima, Mauricio, Jr.; Cantarero Sáez, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, P.V.
Aquest document és un/a article, creat/da en: 2012

Este documento está disponible también en : http://dx.doi.org/10.1186/1556-276X-7-247
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.

    Möller, Michael Hernández-Mínguez, Alberto Breuer, Steffen Pfüller, Carsten Brandt, Oliver Morais de Lima, Mauricio, Jr. Cantarero Sáez, Andrés Geelhaar, Lutz Riechert, Henning Santos, Paulo V. 2012 Polarized recombination of acoustically transported carriers in GaAs nanowires Nanoscale Research Letters 7 247
http://dx.doi.org/10.1186/1556-276X-7-247
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