Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

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dc.contributor.author Martínez Criado, Gema
dc.contributor.author Cros Stotter, Ana
dc.contributor.author Cantarero Sáez, Andrés
dc.contributor.author Ambacher, O.
dc.contributor.author Miskys, C. R.
dc.contributor.author Dimitrov, R.
dc.contributor.author Stutzmann, M.
dc.contributor.author Smart, J.
dc.contributor.author Shealy, J. R.
dc.date.accessioned 2010-06-21T10:27:21Z
dc.date.available 2010-06-21T10:27:21Z
dc.date.issued 2001
dc.identifier.uri http://hdl.handle.net/10550/13028
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000009004735000001&idtype=cvips&prog=normal&doi=10.1063/1.1408268 en
dc.source MARTÍNEZ CRIADO, G. ; CROS, A. ; CANTARERO, A. ; AMBACHER, O. ; MISKYS, C.R. ; DIMITROV, R. ; STUTZMANN, M. ; SMART, J. ; SHEALY, J.R. Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures. En: Journal of Applied Phisics, 2001, vol. 90, no. 9 en
dc.subject Aluminium compounds ; Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor heterojunctions ; Two-dimensional electron gas ; Electron density ; Internal stresses ; Photoluminescence ; Raman spectra ; Excitons ; Interface states ; Piezoelectric semiconductors ; Dielectric polarisation en
dc.title Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.1408268 en
dc.description.abstractenglish Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (ns). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed. en
dc.description.private Andres.Cantarero@uv.es ; Gema.Martinez@uv.es en

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