Recombination processes in unintentionally doped GaTe single crystals
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Recombination processes in unintentionally doped GaTe single crystals

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Recombination processes in unintentionally doped GaTe single crystals

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dc.contributor.author Zubiaga, A.
dc.contributor.author García, J. A.
dc.contributor.author Plazaola, F.
dc.contributor.author Muñoz Sanjosé, Vicente
dc.contributor.author Martínez Tomás, María del Carmen
dc.date.accessioned 2010-06-14T09:33:36Z
dc.date.available 2010-06-14T09:33:36Z
dc.date.issued 2002
dc.identifier.uri http://hdl.handle.net/10550/12968
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000092000012007330000001&idtype=cvips&prog=normal&doi=10.1063/1.1523144 en
dc.source ZUBIAGA, A. ; GARCÍA, J.A. ; PLAZAOLA, F. ; MUÑOZ SANJOSÉ, V. ; MARTÍNEZ TOMÁS, M.C. Recombination processes in unintentionally doped GaTe single crystals. En: Journal of Applied Physics, 2002, vol. 92, no. 12 en
dc.subject Gallium compounds ; III-VI semiconductors ; Photoluminescence ; Impurity states ; Cefect states ; Electron-phonon interactions ; Phonon-exciton interactions ; Excitons ; Red shift ; Radiation quenching en
dc.title Recombination processes in unintentionally doped GaTe single crystals en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.1523144 en
dc.description.abstractenglish Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and defects was analyzed. The results obtained show the existence of two acceptor levels with ionization energies of 110±5 and 150±5 meV, respectively, and one donor level with an ionization energy of 75±5 meV. The study of chemical composition by inductively coupled plasma-optical emission spectroscopy and x-ray energy dispersion spectroscopy shows the existence of Na, Li, and Si. Sodium and lithium impurities could be associated with acceptor levels at gallium substitutional sites, and silicon ones with a donor level at Ga sites, whose vacancies can also be involved in these electronic levels. en
dc.description.private martinca@uv.es ; munozv@uv.es en
dc.identifier.idgrec 002414 en

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