Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells
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Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells

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Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells

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dc.contributor.author Martínez Pastor, Juan Pascual
dc.contributor.author Segura García del Río, Alfredo
dc.contributor.author Valdés Navarro, José Luis
dc.contributor.author Chevy, A.
dc.date.accessioned 2010-06-08T11:04:58Z
dc.date.available 2010-06-08T11:04:58Z
dc.date.issued 1987
dc.identifier.uri http://hdl.handle.net/10550/12920
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000062000004001477000001&idtype=cvips&prog=normal&doi=10.1063/1.339627 en
dc.source MARTÍNEZ PASTOR, J. ; SEGURA, A. ; VALDÉS, J.L. ; CHEVY, A. Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells. En: Journal of Applied Physics, 1987, vol. 62, no. 4 en
dc.subject Optimization ; Efficiency ; Indium Selenide Solar Cells ; Performance ; Indium Oxides ; Tin Oxides ; Photovoltaic Effect ; Electrical Properties ; Experimental Data en
dc.title Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.339627 en
dc.description.abstractenglish Conditions for efficiency improvement and optimization in indium‐tin‐oxide/p‐indium‐selenide solar cells are discussed in this paper. This aim is achieved by using low‐resistivity p‐indium‐selenide and by incorporating a back‐surface‐field contact. This contact is insured by a p‐indium selenide/gold barrier whose rectifying behavior is explained through the complex impurity structure of p‐indium‐selenide. Electrical and photovoltaic properties of the cells are also reported. The efficiency parameters under AM1 simulated conditions have been improved up to 32 mA/cm2 for the short‐circuit current density, 0.58 V for the open‐circuit voltage, and 0.63 for the filling factor. As a result, solar efficiencies larger than 10% in annealed cells and 8% in unannealed ones have been attained. The limitations of these devices are discussed by investigating the dependence of electrical and efficiency parameters in function of photon flux and temperature. en
dc.description.private Juan.Mtnez.Pastor@uv.es ; Jose.L.Valdes@uv.es en

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