High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
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High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

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High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

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Martínez Pastor, Juan Pascual; Segura García del Río, Alfredo; Chevy, A.
This document is a artículo publicadoDate1993

Este documento está disponible también en : http://hdl.handle.net/10550/12903

    MARTÍNEZ PASTOR, J. ; SEGURA, A. ; CHEVY, A. High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide. En: Journal of Applied Physics, 1993, vol. 74, no. 5
http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000074000005003231000001&idtype=cvips&prog=normal&doi=10.1063/1.354597

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