Transport properties of nitrogen doped p‐gallium selenide single crystals
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Transport properties of nitrogen doped p‐gallium selenide single crystals

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Transport properties of nitrogen doped p‐gallium selenide single crystals

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dc.contributor.author Sánchez Royo, Juan Francisco
dc.contributor.author Segura García del Río, Alfredo
dc.contributor.author Chevy, A.
dc.contributor.author Roa, L.
dc.date.accessioned 2010-06-08T10:30:58Z
dc.date.available 2010-06-08T10:30:58Z
dc.date.issued 1996
dc.identifier.uri http://hdl.handle.net/10550/12901
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000079000001000204000001&idtype=cvips&prog=normal&doi=10.1063/1.360932 en
dc.source SANCHEZ ROYO, J.F. ; SEGURA, A. ; CHEVY, A. ; ROA, L. Transport properties of nitrogen doped p‐gallium selenide single crystals. En: Journal of Applied Physics, 1996, vol. 79, no. 204 en
dc.subject Doped Materials ; Excitons ; Gallium Selenides ; Hall Effect ; Hole Mobility ; Monocrystals ; Nitrogen Additions ; Optical Phonons ; P−Type Conductors ; Temperature Dependence ; Transport Processes en
dc.title Transport properties of nitrogen doped p‐gallium selenide single crystals en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.360932 en
dc.description.abstractenglish Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in order to give quantitative account of the temperature dependence of the hole mobility: scattering by 16.7 meV A′1 homopolar optical phonons with a hole‐phonon coupling constant g2=0.115 and scattering by 31.5 meV LO polar phonon with a hole Fröhlich constant αh⊥=0.741. en
dc.description.private Juan.F.Sanchez@uv.es en

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