Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

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dc.contributor.author Purón, E.
dc.contributor.author Martínez Criado, Gema
dc.contributor.author Riech, I.
dc.contributor.author Almeida García, J.
dc.contributor.author Cantarero Sáez, Andrés
dc.date.accessioned 2010-06-03T07:42:36Z
dc.date.available 2010-06-03T07:42:36Z
dc.date.issued 1999
dc.identifier.uri http://hdl.handle.net/10550/12851
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000086000001000418000001&idtype=cvips&prog=normal&doi=10.1063/1.370746 en
dc.source PURÓN, E. ; MARTÍNEZ CRIADO, G. ; RIECH, I. ; ALMEIDA GARCÍA, J. CANTARERO, A. Growth and optical characterization of indirect-gap AlxGa1−xAs alloys. En: Journal of Applied Physics, 1999, vol. 86, no. 1 en
dc.subject Photoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide , Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectra en
dc.title Growth and optical characterization of indirect-gap AlxGa1−xAs alloys en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.370746 en
dc.description.abstractenglish Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when growing high-aluminum-content layers by this technique. Furthermore, Raman measurements show the quadratic variations of longitudinal optical phonon frequencies with aluminum concentration in good agreement with previous experimental results. In this work we show that high quality indirect-gap AlxGa1−xAs samples can be grown by LPE under near-equilibrium conditions. en
dc.description.private Andres.Cantarero@uv.es en

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