Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination.
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Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination.

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Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination.

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dc.contributor.author Pitarch, Ángeles
dc.contributor.author García Belmonte, Germà
dc.contributor.author Bisquert, Juan
dc.contributor.author Henk, Bolink
dc.date.accessioned 2010-05-26T11:23:53Z
dc.date.available 2010-05-26T11:23:53Z
dc.date.issued 2006
dc.identifier.uri http://hdl.handle.net/10550/11211
dc.language.iso en en
dc.relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000100000008084502000001&idtype=cvips&prog=normal&doi=10.1063/1.2358302 en
dc.source PITARCH, Ángeles ; GARCÍA-BELMONTE, Germà ; BISQUERT, Juan ; BOLINK, Henk. Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination. En: Journal of Applied Physics, 2006, vol. 100 en
dc.subject Organic light emitting diodes ; Space charge ; Space-charge-limited conduction ; Electron-hole recombination ; Electric impedance ; Electron mobility ; Hole mobility ; Capacitance en
dc.title Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination. en
dc.type info:eu-repo/semantics/article en
dc.type info:eu-repo/semantics/publishedVersion en
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.2358302 en
dc.description.abstractenglish The impedance model for a one-carrier space-charge-limited (SCL) current has been applied to explain some experimental features of double carrier organic light-emitting diodes. We report the analytical model of impedance of bipolar drift transport in SCL regime in the limit of infinite recombination. In this limit the ac impedance function is identical to that of a single carrier device, with a transit time modified by the sum of mobilities for electrons and holes, μn+μp. The static capacitance C(ω→0) is a factor of ¾ lower than the geometric capacitance, as observed for single carrier devices, but it is shifted to higher frequencies. It follows that impedance measurements in the dual-carrier organic diodes with strong recombination provide the combination of μn+μp. For the mobilities of the different carriers to be determined separately, additional information is required. en
dc.description.private Henk.Bolink@uv.es en

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